首页> 外国专利> SEMICONDUCTOR DEVICE TO AVOID DETERIORATION OF ELECTRICAL CHARACTERISTIC AND PHYSICAL BREAKDOWN OF FUNCTIONAL DEVICE LIKE MEMORY DEVICE, LOGIC DEVICE, ETC. FORMED IN PLURAL SEMICONDUCTOR CHIPS STACKED ON STACK BASE

SEMICONDUCTOR DEVICE TO AVOID DETERIORATION OF ELECTRICAL CHARACTERISTIC AND PHYSICAL BREAKDOWN OF FUNCTIONAL DEVICE LIKE MEMORY DEVICE, LOGIC DEVICE, ETC. FORMED IN PLURAL SEMICONDUCTOR CHIPS STACKED ON STACK BASE

机译:避免损坏功能性设备(如存储设备,逻辑设备等)的电气特性和物理故障的半导体设备。堆叠在堆叠式中的多片半导体芯片中

摘要

PURPOSE: A semiconductor device is provided to avoid deterioration of an electrical characteristic and physical breakdown of a functional device(e.g. a circuit device or a semiconductor device) like a memory device, a logic device, etc. formed in a plurality of semiconductor chips stacked on a stack base, and to form a fine interconnection pitch of an interconnection for relaying wires for wire bonding without deteriorating the bonding intensity of the wire. CONSTITUTION: At least one semiconductor chip(2) having an externally drawn-out electrode is stacked on a stack base(4). An interposer chip(3) having at least one interconnection is formed. The externally drawn-out electrode formed in the at least one semiconductor chip is connected to the interconnection in the at least one interposer chip by a wire bonding process. The externally drawn-out electrode formed in the semiconductor chip connected to the interconnection is electrically connected to an electrode of an interconnection formed in the stack base or another semiconductor chip.
机译:目的:提供一种半导体器件,以避免电特性的劣化和功能器件(例如电路器件或半导体器件)的物理故障,例如在堆叠的多个半导体芯片中形成的存储器件,逻辑器件等。在叠层基座上形成一个小互连间距,以在不降低导线的键合强度的情况下形成用于中继导线以进行导线键合的互连的精细互连间距。组成:至少一个具有外部引出电极的半导体芯片(2)堆叠在堆叠基座(4)上。形成具有至少一个互连的插入器芯片(3)。形成在至少一个半导体芯片中的外部引出电极通过引线键合工艺连接到至少一个插入器芯片中的互连。形成在连接至互连的半导体芯片中的外部引出电极电连接至形成于堆叠基体或另一半导体芯片中的互连的电极。

著录项

  • 公开/公告号KR20040070020A

    专利类型

  • 公开/公告日2004-08-06

    原文格式PDF

  • 申请/专利权人 SHARP CORPORATION;

    申请/专利号KR20040005325

  • 申请日2004-01-28

  • 分类号H01L23/12;H01L21/52;

  • 国家 KR

  • 入库时间 2022-08-21 22:48:20

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号