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CAPACITOR FABRICATION METHOD USING MULTISTEP WET-ETCH PROCESS FOR SURFACE OF ELECTRODE IN MANUFACTURING MIM CAPACITOR
CAPACITOR FABRICATION METHOD USING MULTISTEP WET-ETCH PROCESS FOR SURFACE OF ELECTRODE IN MANUFACTURING MIM CAPACITOR
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机译:制造MIM电容器中电极表面的多步湿法腐蚀电容器制造方法
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摘要
PURPOSE: A capacitor fabrication method using a multistep wet-etch process for a surface of an electrode is provided to improve an interface characteristic between a bottom metal electrode and a dielectric layer by performing the multistep wet-etch process. CONSTITUTION: A bottom metal electrode of a capacitor is formed(1310). The first wet-etch process for a surface of the bottom metal electrode is performed to remove an undesired surface oxide layer from the surface of the bottom metal electrode(1320). The second wet-etch process for the surface of the bottom metal electrode is performed to remove undesired surface organic materials from the surface of the bottom metal electrode(1330,1340). A dielectric layer is formed on the bottom metal electrode(1350). A top metal electrode is formed on the dielectric layer.
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