首页> 外国专利> METHOD FOR MANUFACTURING FIELD EMISSION DEVICE FOR MINIMIZING DAMAGES ON A TUNNEL OXIDE FILM BY FORMING THE TUNNEL OXIDE FILM IN THE LATTER HALF OF PROCESS

METHOD FOR MANUFACTURING FIELD EMISSION DEVICE FOR MINIMIZING DAMAGES ON A TUNNEL OXIDE FILM BY FORMING THE TUNNEL OXIDE FILM IN THE LATTER HALF OF PROCESS

机译:通过在过程半壁上形成隧道氧化膜来制造最小化隧道氧化膜损伤的场致发射装置的方法

摘要

PURPOSE: A method is provided to achieve improved operating reliability of a field emission device and lengthen the useful life of the field emission device by minimizing the damages on a tunnel oxide film due to formation of a lower plate. CONSTITUTION: A method comprises a step of protecting a certain part of the top of a lower electrode where a tunnel oxide film is to be formed, by using a thin film hard mask(13) formed at the center of the top of the lower electrode and a photoresist(PR) used in the process of etching the thin film hard mask; and a step of removing the thin film hard mask and the photoresist prior to formation of a top electrode, and forming a tunnel oxide film on the exposed lower electrode.
机译:目的:提供一种方法,以通过最小化由于形成下板而对隧道氧化膜造成的损害,来实现场发射器件的改进的操作可靠性并延长场发射器件的使用寿命。组成:一种方法包括以下步骤:通过使用在下部电极顶部中央形成的薄膜硬掩模(13),保护下部电极顶部的将要形成隧道氧化膜的特定部分以及在蚀刻所述薄膜硬掩模的过程中使用的光致抗蚀剂。在形成顶部电极之前去除薄膜硬掩模和光致抗蚀剂,并在暴露的下部电极上形成隧道氧化膜的步骤。

著录项

  • 公开/公告号KR20040090812A

    专利类型

  • 公开/公告日2004-10-27

    原文格式PDF

  • 申请/专利权人 LG ELECTRONICS INC.;

    申请/专利号KR20030024775

  • 发明设计人 LEE YONG HAN;

    申请日2003-04-18

  • 分类号H01J1/304;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:43

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