METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE TO INCREASE RESOLUTION OF FINE PATTERN

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to increase resolution of a fine pattern by coating a chemical amplification type photoresist layer and by developing the chemical amplification type photoresist layer positively and negatively while using one exposure mask. CONSTITUTION: A photoresist layer is formed on a semiconductor substrate(11) having a layer to be etched. The first exposure process and the first development process are performed on the photoresist layer by using an exposure mask to form the first photoresist layer pattern of a positive type from which an exposed portion is removed. The second exposure process and the second development process are performed on the first photoresist layer pattern by using the exposure mask to form the second photoresist layer pattern(23) from which the first photoresist layer pattern in a non-exposed portion is eliminated.