GaN GaN laser diode

摘要

PURPOSE: A GaN-based laser diode is provided to obtain a characteristic of a single transverse mode and form widely spectrums of beams of short wavelength by using a current confinement layer. CONSTITUTION: A GaN-based laser diode includes a substrate(11), a first clad layer(13), a first optical waveguide layer(14), an active layer(15), a second optical waveguide layer(16), and a second clad layer(18). The first clad layer(13), the first optical waveguide layer(14), the active layer(15), the second optical waveguide layer(16), and the second clad layer(18) are sequentially stacked on the substrate(11). A ridge of the predetermined height is formed on a center of an upper surface of the second clad layer. A current confinement layer(17) is formed on both sides of the ridge. The current confinement layer(17) is formed with InyGa1-yN layer.