LIGHT EMITTING GaN-BASED COMPOUND SEMICONDUCTOR DEVICE WITH DUAL HETERO STRUCTURE TO IMPROVE BRIGHTNESS AND LIGHT EMISSION OUTPUT

摘要

PURPOSE: A light emitting GaN-based compound semiconductor device with a dual hetero structure is provided to improve brightness and a light emission output by forming a light emitting layer and a clad layer made of a low resistivity GaN-based III-V group compound semiconductor. CONSTITUTION: A GaN-based compound semiconductor light emitting device has a dual hetero structure(22) including an InxGa1-xN(0x1) layer as a light emitting layer such that the InxGa1-xN layer contains p-type impurities between an n-type nitride semiconductor layer(16) and a p-type nitride semiconductor layer(20). The light emitting layer is a p-type layer containing Mg as a p-type impurity.