首页>
外国专利>
SEMICONDUCTOR FABRICATION METHOD FOR ENHANCING RELIABILITY BY MINIMIZING CHANNELING PHENOMENON IN ION IMPLANTATION PROCESS
SEMICONDUCTOR FABRICATION METHOD FOR ENHANCING RELIABILITY BY MINIMIZING CHANNELING PHENOMENON IN ION IMPLANTATION PROCESS
展开▼
机译:通过最小化离子注入过程中的通道现象来增强可靠性的半导体制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A semiconductor fabrication method for preventing a channeling phenomenon is provided to minimize the channeling phenomenon and enhance reliability of a semiconductor device by implanting previously silicon ions into a target region into which impurity is implanted. CONSTITUTION: Silicon ions are implanted into a polysilicon layer(16) for forming a semiconductor device and a selected region of a substrate(10). A conductive impurity is implanted into the polysilicon layer and the selected region of the substrate into which the silicon ions are implanted. The selected region of the substrate is a predetermined region for forming a source/drain(22). The selected region of the substrate is a polysilicon layer for forming a gate. The selected region of the substrate is a polysilicon layer for forming a channel region of a lower part of the gate.
展开▼