SEMICONDUCTOR FABRICATION METHOD FOR ENHANCING RELIABILITY BY MINIMIZING CHANNELING PHENOMENON IN ION IMPLANTATION PROCESS

摘要

PURPOSE: A semiconductor fabrication method for preventing a channeling phenomenon is provided to minimize the channeling phenomenon and enhance reliability of a semiconductor device by implanting previously silicon ions into a target region into which impurity is implanted. CONSTITUTION: Silicon ions are implanted into a polysilicon layer(16) for forming a semiconductor device and a selected region of a substrate(10). A conductive impurity is implanted into the polysilicon layer and the selected region of the substrate into which the silicon ions are implanted. The selected region of the substrate is a predetermined region for forming a source/drain(22). The selected region of the substrate is a polysilicon layer for forming a gate. The selected region of the substrate is a polysilicon layer for forming a channel region of a lower part of the gate.