Design and manufacture procedure for semiconductor memory building blocks involves designing first and second layouts and using one layout for entire design layout

摘要

The design and manufacture procedure is especially for DRAM (Dynamic Random Access Memory) building blocks (1). It involves designing first and second layouts after which one building block layout may be used for the entire design layout. The block has an address input division module (9) with address input pads (9a-9d). Several layouts (9'-9''') for the input division module may be produced. There is a memory module (2) at the other end of the circuit block, connected to data input terminals (2a-2d). several layouts (2'-2''') for the memory module may be produced. the circuit includes a quadratic matrix of memory banks (3a-3d).