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tiefgraben dram process on soi for dram cell low leckstromes
tiefgraben dram process on soi for dram cell low leckstromes
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机译:在SOI上使用tiefgraben dram工艺处理dram细胞低leckstrom
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摘要
A deep trench DRAM cell is formed on a silicon on isolator (SOI) substrate, with a buried strap formed by outdiffusion of dopant in associated trench node material, for providing an electrical connection between the trench node and the active area of a MOS transfer gate formed in the substrate adjacent the trench in an uppermost portion of the substrate. IMAGE
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