QUANTIFICATION METHOD FOR NITROGEN CONCENTRATION IN SILICON CRYSTAL, EVALUATION METHOD FOR SILICON CRYSTAL, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To quickly and easily quantify a nitrogen concentration in a silicon crystal manufactured by a CZ method.;SOLUTION: The first-third conversion factors α1-α3 for converting the first-third infrared absorption line peak intensities corresponding to the first-third impurity nitrogen components contained in a sample into the respective concentration of the first-third impurity nitrogen components are estimated in the one sample cut out from a silicon ingot manufactured by the CZ method. The first-third infrared absorption line peaks I₁-I₃ are measured as to an optional wafer cut out from the ingot. The nitrogen concentration in the whole of the optional wafer is calculated using the measured first-third infrared absorption line peaks and the first-third predetermined conversion factors.;COPYRIGHT: (C)2005,JPO&NCIPI