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Comparison of Silicon Nanocrystals Prepared by Two Fundamentally Different Methods

机译:两种根本不同方法制备的硅纳米晶的比较

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摘要

This work compares structural and optical properties of silicon nanocrystals prepared by two fundamentally different methods, namely, electrochemical etching of Si wafers and low-pressure plasma synthesis, completed with a mechano-photo-chemical treatment. This treatment leads to surface passivation of the nanoparticles by methyl groups. Plasma synthesis unlike electrochemical etching allows selecting of the particle sizes. Measured sizes of the nanoparticles by dynamic light scattering show 3 and 20 nm for electrochemically etched and plasma-synthetized samples, respectively. Plasma-synthetized 20-nm particles do not exhibit photoluminescence due to absence of quantum confinement effect, and freshly appeared photoluminescence after surface passivation could indicate presence of organic molecules on the nanoparticle surface, luminescing instead of nanocrystal core. Electrochemically etched sample exhibits dramatic changes in photoluminescence during the mechano-photo-chemical treatment while no photoluminescence is observed for the plasma-synthetized one. We also used the Fourier transform infrared spectroscopy for comparison of the chemical changes happened during the treatment.
机译:这项工作比较了通过两种根本不同的方法制备的硅纳米晶体的结构和光学性质,即用机械光化学处理完成的硅晶片的电化学刻蚀和低压等离子体合成。该处理导致纳米颗粒被甲基表面钝化。与电化学蚀刻不同,等离子体合成可以选择粒径。通过动态光散射测量的纳米颗粒尺寸分别为3nm和20nm,分别用于电化学蚀刻和等离子体合成的样品。等离子体合成的20 nm粒子由于没有量子限制效应而没有显示出光致发光,并且在表面钝化后新近出现的光致发光可能表明纳米粒子表面上存在有机分子,发亮而不是纳米晶核。电化学蚀刻的样品在机械光化学处理过程中显示出显着的光致发光变化,而等离子体合成的样品未观察到光致发光。我们还使用傅里叶变换红外光谱法比较了治疗过程中发生的化学变化。

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