DOUBLE EXPOSURE PHOTOMASK AND EXPOSURE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a double exposure photomask with which a resist pattern having aimed dimensions can be formed corresponding to each pattern even when patterns with different pitches are present.;SOLUTION: The mask includes a first photomask 100 where a dense pitch pattern is formed and a portion where a coarse pitch pattern is to be formed is masked, and a second photomask 110 where a coarse pitch pattern is formed and a portion where a dense pitch pattern is to be formed is masked.;COPYRIGHT: (C)2005,JPO&NCIPI