首页> 外国专利> DRY ETCHING METHOD, MICROLENS ARRAY AND FORMING METHOD THEREOF

DRY ETCHING METHOD, MICROLENS ARRAY AND FORMING METHOD THEREOF

机译:干刻法,微阵列及其形成方法

摘要

PROBLEM TO BE SOLVED: To provide a method for etching with suppressing an occurrence of a subtrench and to provide a microlens array and a forming method thereof.;SOLUTION: The dry etching method consists of the first process of etching by applying a bias electric voltage to a substrate and the second process of etching after altering the bias voltage lower than that of the first process, each conducted under a plasma atmosphere, the first process using an etching gas of a fluorocarbon gas containing as an added gas a Cx1Fy1 (x1= 2-5; y1=4-12; and x1/y1≥0.4) and the second process using an etching gas of a fluorocarbon gas containing as an added gas a Cx2Fy2 (x2=1-3; y2=4-8; and x2/y20.4) and furthermore the bias voltage and the etching gas being altered under the continuous state of plasma electric discharge at a time of changing from the first process after smoothing the surface of the substrate to the second process. The microlens array is obtained by this etching method.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种抑制次沟槽的发生的蚀刻方法,并提供一种微透镜阵列及其形成方法。解决方案:干蚀刻方法包括通过施加偏置电压进行蚀刻的第一步骤。分别在等离子气氛下进行的,将偏压降低到比第一工艺低的第二工艺之后,分别对基板进行蚀刻的第二工艺,第一工艺使用碳氟化合物气体的蚀刻气体,所述碳氟化合物气体的蚀刻气体包含作为添加气体的Cx 1 Fy 1 (x 1 = 2-5; y 1 = 4-12;和x 1 < /Sub>/y1≥0.4)和第二种方法,该方法使用碳氟化合物气体的蚀刻气体,该气体包括Cx 2 Fy 2 < / Sub>(x 2 = 1-3; y 2 = 4-8;和x 2 / y 2 <0.4),并且在从第一过程开始改变时,在等离子放电的连续状态下,偏压和蚀刻气体也会改变在将衬底的表面平滑至第二过程之后的s秒。通过这种刻蚀方法获得了微透镜阵列。版权所有:(C)2006,JPO&NCIPI

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号