METHOD OF GROWING HIGH QUALITY ZnSe EPITAXIAL LAYER ONTO NEW Si SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a high-quality large-area ZnSe layer on a Si substrate.;SOLUTION: The method grows a GeSi1-X/Ge epitaxial layer on a Si substrate by the ultra-high vacuum chemical vapor deposition (UHVCVD) method to finally form a ZnSe thin film on a Ge buffer layer. This manufacturing process provides two concepts. The first concept employs a strained interface to stop the dislocation arising from the GeSi1-X/Ge epitaxial layer, thus terminating the dislocation from propagating upwards. This results in a very reduced dislocation density of the ZnSe layer to improve the surface roughness. The second concept prevents anti-phase domains from growing due to the growth of a polar material on a non-polar material using an off-cut corner Si substrate, this solving the problem of the diffusion between dissimilar atoms during growing a usual ZnSe layer on the Si substrate.;COPYRIGHT: (C)2006,JPO&NCIPI