首页> 外国专利> METHOD FOR FORMING FLAT INDIUM TIN OXIDE LAYER ON SUBSTRATE, SUBSTRATE COATING AND ORGANIC LIGHT EMITTING DIODE OF INDIUM TIN OXIDE

METHOD FOR FORMING FLAT INDIUM TIN OXIDE LAYER ON SUBSTRATE, SUBSTRATE COATING AND ORGANIC LIGHT EMITTING DIODE OF INDIUM TIN OXIDE

机译:在基质,基质涂层和氧化铟锡的有机发光二极管上形成平坦的氧化铟锡层的方法

摘要

PROBLEM TO BE SOLVED: To enable to generate a flat metal oxide layer, especially a flat ITO layer on a substrate in a simple and economical mode.;SOLUTION: In order to especially form an organic light emitting diode, in a method for forming the ITO layer on the substrate, a part of a thickness of the ITO layer is firstly given by a sputter-deposition at a controlled temperature profile in such a mode that formation of a crystal nucleus may be prevented. After that, the partially coated substrate is heated up to a higher temperature than the recrystallization temperature of the ITO layer, and the remaining part of the ITO layer is sputter-deposited.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:为了能够以简单且经济的方式在基板上产生平坦的金属氧化物层,尤其是平坦的ITO层;解决方案:为了特别地形成有机发光二极管,采用一种形成有机发光二极管的方法。在衬底上的ITO层上,首先通过以可防止晶核形成的方式在受控的温度曲线上进行溅射沉积来提供ITO层厚度的一部分。之后,将部分涂覆的基板加热到比ITO层的重结晶温度更高的温度,并溅射沉积ITO层的其余部分。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005011809A

    专利类型

  • 公开/公告日2005-01-13

    原文格式PDF

  • 申请/专利权人 APPLIED FILMS GMBH & CO KG;

    申请/专利号JP20040178418

  • 发明设计人 BENDER MARCUS;

    申请日2004-06-16

  • 分类号H05B33/10;C23C14/08;C23C14/34;H01B13/00;H05B33/14;H05B33/28;

  • 国家 JP

  • 入库时间 2022-08-21 22:35:37

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