Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed of the same, and methods of manufacturing the semiconductor device and the semiconductor memory device

摘要

Provided are a method of forming a silicide film having excellent thermal stability, a semiconductor device and a semiconductor memory device comprising the silicide film formed using the same, and methods of manufacturing the semiconductor device and the semiconductor memory device. A method of forming a nickel mono silicide film including germanium includes sequentially forming a germanium film and a nickel film on a substrate containing silicon and annealing the product. A semiconductor device comprising the nickel mono silicide film, a semiconductor memory device comprising the nickel mono silicide film, and methods of manufacturing the semiconductor device and the semiconductor memory device.