Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed by the same, and methods of manufacturing the same

摘要

The excellent thermal stability silicide film forming method, has been disclosed about the method of manufacturing a silicide film is formed in this way provided a semiconductor device as a semiconductor memory device, and these devices. The disclosed invention is a semiconductor element having a laminated structure sequentially film germanium film and the nickel on a silicon containing substrate, the heat-treating the resultant service nickel monosilicide film forming method containing germanium, and the thus formed nickel monosilicide film It provides a method of producing a semiconductor memory device, and these devices.