首页>
外国专利>
REDUCED BARRIER PHOTODIODE/TRANSFER GATE DEVICE STRUCTURE OF HIGH EFFICIENCY CHARGE TRANSFER AND REDUCED LAG AND METHOD OF FORMATION, AND
REDUCED BARRIER PHOTODIODE/TRANSFER GATE DEVICE STRUCTURE OF HIGH EFFICIENCY CHARGE TRANSFER AND REDUCED LAG AND METHOD OF FORMATION, AND
展开▼
机译:高效电荷转移和迟滞的减少的阻挡层光电二极管/转移门装置结构和形成方法,以及
展开▼
页面导航
摘要
著录项
相似文献
摘要
A pixel cell having a reduced potential barrier near a region where a gate and a photodiode are in close proximity to one another, and a method for forming the same are disclosed. Embodiments of the invention provide a pixel cell comprising a substrate. A gate of a transistor is formed at least partially below the surface of the substrate and a photodiode is adjacent to the gate. The photodiode comprises a doped surface layer of a first conductivity type, and a doped region of a second conductivity type underlying the doped surface layer. The doped surface layer is at least partially above a level of the bottom of the gate.
展开▼