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Reduced barrier photodiode / gate device structure for high efficiency charge transfer and reduced lag and method of formation
Reduced barrier photodiode / gate device structure for high efficiency charge transfer and reduced lag and method of formation
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机译:减少势垒光电二极管/栅极器件的结构,以实现高效率的电荷转移和减少滞后,以及形成方法
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摘要
A pixel cell having a reduced potential barrier near a region where a gate and a photodiode are in close proximity to one another, and a method for forming the same are disclosed. Embodiments of the invention provide a pixel cell comprising a substrate. A gate of a transistor is formed at least partially below the surface of the substrate and a photodiode is adjacent to the gate. The photodiode comprises a doped surface layer of a first conductivity type, and a doped region of a second conductivity type underlying the doped surface layer. The doped surface layer is at least partially above a level of the bottom of the gate.
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