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Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device
Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device
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机译:具有集成电容器和栅电极的铁电非易失性存储器件以及铁电非易失性存储器件的驱动方法
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摘要
A ferroelectric non-volatile memory device that allows the coupling ratio to be increased and the effect of voltage distribution to the ferroelectric capacitor to be improved without increasing the area of the gate electrode of a detection MIS field effect transistor is provided. In a memory cell structure, a semiconductor including regions for a source, a channel, and a drain, a gate insulator on the channel region, a floating gate conductor, a ferroelectrics, and an upper electrode conductor are layered in this order. The structure includes a paraelectric capacitor having one end connected to the floating gate conductor and the other end connected to the source region.
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