Method of forming metal line in semiconductor device including forming first and second zirconium films

摘要

Provided is a method of forming a metal line in a semiconductor device. According to the present invention, a barrier metal layer, a Zr film, and a Cu thin film is sequentially formed in insides of a dual damascene pattern comprising via holes and trenches. Then, a Zr film is formed on the Cu thin film, and Zr is allowed to be diffused into crystal particles of Cu and interfaces between the crystal particles by carrying out a heat treatment process thereto, so that uniform Cu (Zr) bonds are formed regardless of a depth. As a result, an EM resistance characteristic of the Cu thin film even in narrower and deeper via holes can be improved, and thus reliability of process and an electrical characteristic of a device can be also improved.