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SMT-type structure of the silicon-based electret condenser microphone

机译:硅基驻极体电容传声器的SMT型结构

摘要

This invention mainly provides a SMT-type structure of the minimized and low-power silicon-based electret condenser microphone. Primarily integrates with the electret, silicon-based, MEMS and microphone techniques to implement the minimized and low-power silicon-based electret condenser microphone. The Silicon-based bi-diaphragm of the composite diaphragm-chip was coated with the low-dielectric macromolecule material to allow the microphone acquires the sufficient electrical charges. Moreover, the impedance matching element of the microphone that MOSFET was implemented by the MEMS technology. Conclusively, this silicon-based electret condenser microphone gains several achievements as the smallest volume, a lower bias voltage, a SMT-type structure, a lower residue stress and a lower assembly cost.
机译:本发明主要提供最小化和低功率的硅基驻极体电容传声器的SMT型结构。主要与驻极体,硅基MEMS和麦克风技术集成,以实现最小化和低功耗的硅基驻极体电容式麦克风。复合膜片芯片的硅基双膜片涂有低介电高分子材料,以使传声器获得足够的电荷。而且,MOSFET的麦克风的阻抗匹配元件是通过MEMS技术实现的。最终,这种基于硅的驻极体电容传声器获得了多项成就,包括最小的体积,更低的偏置电压,SMT型结构,更低的残余应力和更低的组装成本。

著录项

  • 公开/公告号US6870939B2

    专利类型

  • 公开/公告日2005-03-22

    原文格式PDF

  • 申请/专利权人 DAR-MING CHIANG;TSUNG-LUNG YANG;

    申请/专利号US20010994687

  • 发明设计人 DAR-MING CHIANG;TSUNG-LUNG YANG;

    申请日2001-11-28

  • 分类号H04R25/00;

  • 国家 US

  • 入库时间 2022-08-21 22:20:22

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