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Edge polished wafer, polishing cloth for edge polishing, and apparatus and method for edge polishing

机译:边缘抛光的晶片,用于边缘抛光的抛光布以及用于边缘抛光的装置和方法

摘要

Provided are a novel edge polished wafer in which a wafer peripheral sag is suppressed, a polishing cloth, a polishing apparatus and a polishing method for processing the wafer. The wafer is provided by controlling an over-polish width in edge polishing to 400 μm or less. Also, the polishing cloth has a multi-layer structure of at least two layers including a polishing fabric layer an Asker C hardness of which is 65 or higher and a sponge layer an Asker C hardness of which is 40 or lower, or a single layer structure of the polishing fabric layer. Further, the polishing apparatus and the polishing method are provided by edge polishing such that the wafer in rotation is put into contact with a rotary drum having the polishing cloth adhered thereon at a prescribed angle thereto while supplying polishing slurry to the contact portion of the polishing cloth.
机译:本发明提供一种新型的边缘抛光的晶片,该晶片在其中抑制了晶片的周边垂度,提供了一种抛光布,一种抛光装置和一种用于加工晶片的抛光方法。通过将边缘抛光中的过抛光宽度控制为400μm或更小来提供晶片。而且,抛光布具有至少两层的多层结构,包括Asker C硬度为65以上的抛光布层和Asker C硬度为40以下的海绵层或单层。抛光织物层的结构。此外,通过边缘抛光来提供抛光设备和抛光方法,以使旋转的晶片与以预定角度附着于其上的抛光布附着在其上的旋转鼓接触,同时将抛光浆料供应至抛光的接触部分。布。

著录项

  • 公开/公告号US6962521B2

    专利类型

  • 公开/公告日2005-11-08

    原文格式PDF

  • 申请/专利权人 KAZUTOSHI MIZUSHIMA;

    申请/专利号US20030332312

  • 发明设计人 KAZUTOSHI MIZUSHIMA;

    申请日2001-07-06

  • 分类号B24B9/06;

  • 国家 US

  • 入库时间 2022-08-21 22:20:14

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