HIGH K ARTIFICIAL LATTICES FOR CAPACITOR APPLICATIONS TO USE IN CU OR AL BEOL

摘要

A kind of new method of improved manufacture high dielectric constant MIM capacitor. These high dielectric constant MIM capacitors meet all strict demand needs for the application of two RF and analog circuit. For high dielectric constant MIM capacitor, which includes the dual-damascene technics of copper electrode. Dielectric constant is the artificial layer in 4/4,2/2 and 1/1 by the number of plies with total thickness superlattices. Therefore the thickness of film can readily control. Enhancing dielectric constant is because of interface. Dielectric constant can be readily implemented as 250 angstroms of thick superlattices close to 900. MBE, molecular beam epitaxy or ALCVD, atomic layer CVD technology are used for the type layer growth technique