FLOATING GATE MEMORY CELL, FLOATING GATE MEMORY ARRANGEMENT, SWITCHING CIRCUIT ARRANGEMENT, AND METHOD FOR PRODUCING A FLOATING GATE MEMORY CELL

摘要

Floating gate storage cell comprises source/drain regions (101, 102) and a floating gate layer (105) made from a metallic conducting material; and a channel region (103) made from an electrically insulating material. An Independent claim is also included for a process for the production of a floating gate storage cell. Preferred Features: The floating gate storage cell has a first layer containing a channel region arranged between source/drain regions, a first dielectric layer on the first layer, a floating gate layer, a second dielectric layer, and a control gate electrode layer on the second dielectric layer.