FLOATING GATE MEMORY CELL, FLOATING GATE MEMORY ARRANGEMENT, SWITCHING CIRCUIT ARRANGEMENT, AND METHOD FOR PRODUCING A FLOATING GATE MEMORY CELL

摘要

The invention relates to a floating gate memory cell, a floating gate memory arrangement, a switching circuit arrangement, and a method for producing a floating gate memory cell. The two source/drain regions and the floating gate layer in the floating gate memory cell consist of a metallically conductive material, and the channel region consists of an electrically insulating material.