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Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications
Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications
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机译:用于低压和低功率应用的擦除存储设备的方法和对存储设备进行编程的方法
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摘要
A method of erasing and a method of programming a nonvolatile memory cell in a chip is disclosed. Said cell comprises a semiconductor substrate including a source and a drain region and a channel therebetween, a floating gate extending over a portion of said channel, a control gate extending over another portion of the channel region, and a program gate capacitively coupled through a dielectric layer to said floating gate. The methods or schemes are using substantially the lowest possible voltage to erase a nonvolatile memory cell of the floating-gate type without having the SILC problem. Therefore, these schemes are expected to allow a further scaling of the minimum feature size of Flash memory products which is necessary for cost reduction and density increase.;The present invention also aims to further decrease the voltages necessary to erase/program the memory device without degrading the corresponding performance.
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