Method of forming an ultrathin SiO2 layer using N2O as the oxidant

摘要

N₂O is used as the oxidant for forming an ultra-thin oxide (14). The low oxidation efficiency of N₂O compared to O₂ allows the oxidation temperature to be raised to greater than 850°C while maintaining the growth rate. A cold wall lamp heater rapid thermal process (RTP) tool limits reaction to the surface of the wafer (10). Hydrogen is preferably added to improve the electrical properties of the oxide (14).