首页> 外国专利> FLIP CHIP BONDING METHOD FOR ENHANCING THE PERFORMANCE OF CONNECTION IN FLIP CHIP PACKAGING PROCESS AND LAYERED METAL ARCHITECTURE OF SUBSTRATE FOR STUD BUMP

FLIP CHIP BONDING METHOD FOR ENHANCING THE PERFORMANCE OF CONNECTION IN FLIP CHIP PACKAGING PROCESS AND LAYERED METAL ARCHITECTURE OF SUBSTRATE FOR STUD BUMP

机译:用于提高桩头桩基体的桩头封装过程和层状金属结构中连接性能的桩头粘结方法

摘要

A flip chip bonding method for enhancing a bonding performance between a chip and a substrate by forming a bump on the chip or the substrate, and a layered architecture of the substrate for the same are disclosed. The flip chip bonding method comprises the steps of performing pretreatment of a wafer having chips, dicing it, and obtaining the pretreated individual chip; performing pretreatment of a substrate; aligning the pads of the pretreated chip with the pads of the pretreated substrate, and bonding the chip and the substrate together by applying an ultrasonic wave and heat using a collet and simultaneously applying pressure; and performing posttreatment for filling or molding resin after bonding. The chip or the substrate is formed with a plated bump, a stud bump or a wedge bump, respectively. Here, the stud bump or the wedge bump can be additionally formed on the plated bump. The bump can be made of Au, Ni, Ag or Cu. The bump of the substrate has the same size as the bump of the chip or any one of the bump of the substrate and the bump of the chip has a larger size than the other of them. The substrate is plated with Au, Ag, Cu, or Sri.
机译:公开了一种通过在芯片或基板上形成凸块来增强芯片与基板之间的接合性能的倒装芯片接合方法,以及用于该倒装芯片接合方法的基板的分层结构。倒装芯片接合方法包括以下步骤:对具有芯片的晶片进行预处理,将其切成小块,并获得经过预处理的单个芯片。进行基板的预处理;将预处理的芯片的焊盘与预处理的衬底的焊盘对准,并且通过使用夹头施加超声波和热量并同时施加压力来将芯片和衬底粘合在一起。粘接后对树脂进行填充或成型后处理。芯片或基板分别形成有电镀凸块,柱形凸块或楔形凸块。在此,柱形凸块或楔形凸块可另外形成在电镀凸块上。凸块可以由Au,Ni,Ag或Cu制成。基板的凸块具有与芯片的凸块或基板的凸块中的任一个相同的尺寸,并且芯片的凸块具有比它们中的另一个更大的尺寸。基板镀有Au,Ag,Cu或Sri。

著录项

  • 公开/公告号WO2005053013A1

    专利类型

  • 公开/公告日2005-06-09

    原文格式PDF

  • 申请/专利权人 KOO JA-UK;KIM HYOUNG-CHAN;

    申请/专利号WO2004KR01956

  • 发明设计人 KOO JA-UK;KIM HYOUNG-CHAN;

    申请日2004-08-04

  • 分类号H01L21/60;

  • 国家 WO

  • 入库时间 2022-08-21 22:09:56

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