METHOD FOR PRODUCING BY VAPOUR-PHASE EPITAXY A GALLIUM NITRIDE FILM WITH LOW DEFECT DENSITY

摘要

The present invention relates to the production of films of gallium nitride by vapour phase epitaxy with low densities of defects. It relates to a process for the production of a film of gallium nitride (gan) from a substrate, by deposition of gan by vapour phase epitaxy, characterized in that the deposition of gan comprises at least one step of epitaxial lateral overgrowth (elo) in the vapor phase, that at least one of these steps of elo is preceded by an etching of openings or in a dielectric mask deposited beforehand, either directly in the substrate, and in that it is introduced a dissymmetry in the environment of the dislocations during the steps of elo so as to cause the largest number of curvature of the dislocations, the dislocations curved does not protrude on the surface of the layer of gan thus obtenue.elle also concerns the optoelectronic and electronic components produced from these films of gallium nitride.