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COMPOSITION FOR THIN FILM CAPACITANCE ELEMENT, INSULATING FILM OF HIGH DIELECTRIC CONSTANT, THIN FILM CAPACITANCE ELEMENT, THIN FILM LAMINATED CAPACITOR AND METHOD FOR MANUFACTURING THIN FILM CAPACITANCE ELEMENT
COMPOSITION FOR THIN FILM CAPACITANCE ELEMENT, INSULATING FILM OF HIGH DIELECTRIC CONSTANT, THIN FILM CAPACITANCE ELEMENT, THIN FILM LAMINATED CAPACITOR AND METHOD FOR MANUFACTURING THIN FILM CAPACITANCE ELEMENT
A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+ (Am-1 Bm O3m+1)2- or Bi2Am-1 Bm O3m+3, wherein "m" is an odd number, "A" is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and "B" is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi2O2)2+ (Am-1 Bm O3m+1)2- or Bi2Am-1 Bm O3m+3, and the excessive content of Bi is in a range of 0 Bi 0.6xm mol in terms of Bi.
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机译:以(Bi 2 O 2)2+(Am-1 Bm O3m + 1)2或Bi 2 Am的组成式表示具有相对于基板表面垂直取向的c轴的铋层化合物的薄膜电容元件组合物。 -1 Bm O3m + 3,其中“ m”是奇数,“ A”是选自Na,K,Pb,Ba,Sr,Ca和Bi中的至少一种元素,而“ B”是至少一种选择的元素来自铁,钴,铬,镓,钛,铌,钽,锑,钒,钼和钨;相对于(Bi 2 O 2)2+(Am-1 Bm O3m + 1)2或Bi 2 Am-1 Bm O 3 m +3的组成式,铋层化合物中的Bi过多。以Bi计,其范围为0 展开▼