CMOS IMAGE SENSOR FOR PREVENTING FOLIATION AND CRACK OF LTO LAYER IN PAD REGION DUE TO OPENING OF PAD AND CUTTING OF WAFER

摘要

Purpose: CMOS (complementary metal oxide semiconductor) image sensor is arranged to the crack of the cutting of the opening and a chip that prevent leave and LTO (low temperature oxide) layer in a pad regions from padding due to one, to enhance the yield and optical characteristics of CMOS image sensor, by forming an OCL (on coating) pad in an optimum distance. Construction: A metal pad pattern (31) is formed in a pad regions of semi-conductive substrate (30). One passivation layer (32) is formed with partly overlapped metal liquid layer mode, to make the one of metal pat mode to pad (PAD2) exposure. One OCL (33) is formed in the passivation layer from a preset distance of pad. A LTO layers (34) of covering OCL are formed in passivation layer.