PAD CRACK PREVENTING METHOD AND STRUCTURE FOR CMOS IMAGE SENSOR DEVICES

摘要

A method and a structure for preventing a pad crack of a CMOS image sensor device are provided to prevent a pad crack by patterning a protective film except for a region for forming a tungsten plug. An interlayer insulation film(30) is formed on a top part of a semiconductor substrate. A via contact hole is formed on the interlayer insulation film by a photolithography/etching process. A tungsten plug(50) and a top metal pad(60) are formed on a top surface of the interlayer insulation film. A protective film(70) is deposited on a structure of the result. The top metal pad is exposed by patterning the protective film by a photolithography/etching process. The protective film except for a region for forming the tungsten plug is patterned.