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LOW COST SOI SUBSTRATE WITHOUT EXPOSURE OF BURIED OXIDE FILM, SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
LOW COST SOI SUBSTRATE WITHOUT EXPOSURE OF BURIED OXIDE FILM, SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
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机译:低成本的SOI基质,不暴露氧化膜,半导体基质及其制造方法
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摘要
Problem: To provide a method for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of an buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region. ??Means for solution of the problem: A method for the production of an SOI substrate, comprising a step of forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, a step of forming an opening part of a stated pattern in the protective film, a step of implanting oxygen ions to the surface of the semiconductor substrate in a direction not perpendicular thereto, and a step of giving a heat treatment to the semiconductor substrate thereby forming an buried oxide film in the semiconductor substrate, characterized by inducing at the step of implanting oxygen ions to the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.
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