MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING Ti LAYER OR TiN LAYER WITH COMPARATIVELY LOW TEMPERATURE AND GOOD FILM CHARACTERISTICS IN CONTACT HOLE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to form a Ti layer/TiN layer having comparatively low temperature and good film characteristics in a contact hole. CONSTITUTION: A dielectric layer(8) is formed on a basic substrate. A contact hole(12) penetrating the dielectric layer is formed. A Ti layer(14), a Ta layer or a W layer(18) is formed at least on inner sidewalls of the contact hole and a bottom portion of the contact hole. A TiN layer(16), a TaN layer, or a WN layer is formed by nitridizing the Ti layer, the Ta layer or the W layer by using N radicals. A conductive layer burying an inner portion of the contact hole having the TiN layer, the TaN layer, or the WN layer is formed.