Epi Structure and Fabrication Method of InP based MOSFET for Uniform Device Characteristics

摘要

PURPOSE: An epitaxial structure for InP based MOSFET(Metal Oxide Semiconductor Field Effect Transistor) and a method for manufacturing an MOSFET using the same are provided to be capable of obtaining stable and uniform device characteristics by carrying out a liquid phase oxidation step and an oxygen plasma processing step. CONSTITUTION: An epitaxial structure is provided with a semi-insulating InP substrate(10), an InAlAs or InP buffer layer(11) formed on the substrate, an InGaAs channel layer(12) formed on the buffer layer, an InP anti-oxidizing layer(13) formed on the channel layer, and a high concentration N-type InGaAs ohmic/oxide layer(14) formed on the anti-oxidizing layer. At this time, the InGaAs oxide layer is formed by using the following two-step process. The Ga and As of an InGaAs layer are oxidized by using an acidity controlled liquid phase oxidation solution. The In of the InGaAs layer is then oxidized by using an oxygen plasma process.