首页> 外国专利> ORGANIC VERTICAL CAVITY LASER ARRAY DEVICE WITH ETCHED REGION IN DIELECTRIC STACK, ESPECIALLY FORMING TWO-DIMENSIONAL ORGANIC LASER ARRAY DEVICES USING MICRON-SIZED LASER PIXELS

ORGANIC VERTICAL CAVITY LASER ARRAY DEVICE WITH ETCHED REGION IN DIELECTRIC STACK, ESPECIALLY FORMING TWO-DIMENSIONAL ORGANIC LASER ARRAY DEVICES USING MICRON-SIZED LASER PIXELS

机译:介电层中带有刻蚀区域的有机垂直腔激光阵列设备,特别是使用微尺寸激光像素形成二维有机激光阵列设备

摘要

PURPOSE: A method for fabricating an organic vertical cavity laser array device with an etched region in a dielectric stack is provided to permit laser emission from a two-dimensional array of micron-sized organic laser pixels. CONSTITUTION: A substrate(110) is provided. A first part(120) of a bottom dielectric stack reflective to light over a predetermined range of wavelengths is provided. The first part is disposed on the substrate. An etched region is formed in the top surface of the first part of the bottom dielectric stack to define an array of separated laser pixels which have higher reflectance than the interpixel regions for the array to emit laser light. A second part(125) of the bottom dielectric stack is formed on the etched first part. An active region(130) is formed on the second part of the bottom dielectric stack for producing laser light. A top dielectric stack is formed on the active region. The top dielectric stack is separated from the bottom dielectric stack and is reflective to light over a predetermined range of wavelengths.
机译:目的:提供一种用于制造在电介质堆叠中具有蚀刻区域的有机垂直腔激光器阵列器件的方法,以允许从微米级有机激光像素的二维阵列发射激光。组成:提供了一个基板(110)。提供底部电介质叠层的第一部分(120),其反射预定波长范围内的光。第一部分设置在基板上。在底部电介质叠层的第一部分的顶表面中形成蚀刻区域,以限定分离的激光像素的阵列,该阵列的反射率高于用于该阵列发射激光的像素间区域的反射率。底部电介质叠层的第二部分(125)形成在蚀刻的第一部分上。有源区(130)形成在底部电介质叠层的第二部分上,用于产生激光。顶部电介质堆叠形成在有源区上。顶部电介质叠层与底部电介质叠层分离,并且反射预定波长范围内的光。

著录项

  • 公开/公告号KR20050002631A

    专利类型

  • 公开/公告日2005-01-07

    原文格式PDF

  • 申请/专利权人 EASTMAN KODAK COMPANY;

    申请/专利号KR20040049691

  • 发明设计人 KAHEN KEITH B.;

    申请日2004-06-29

  • 分类号H01S5/32;H01S5/183;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:05

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号