SEMICONDUCTOR DEVICE HAVING ELEVATED SOURCE/DRAIN REGIONS AND METHOD OF FABRICATING THE SAME FOR PREVENTING ABNORMAL EPITAXIAL GROWTH BY REMOVING DEFECTIVE PARTS AFTER IMPLANTING IONS

摘要

PURPOSE: A semiconductor device having elevated source/drain regions and a method of fabricating the same are provided to prevent abnormal epitaxial growth by removing defective parts after implanting ions. CONSTITUTION: A gate pattern(18) is formed on a substrate(10). A sidewall spacer(22) is formed on a sidewall of the gate pattern. A recess region(24) is arranged in an outer wall of the sidewall spacer. An epitaxial layer(26) is formed on the recess region. An extension impurity region(20) is formed within the substrate under the sidewall spacer. A highly doped impurity region(30) having a junction depth deeper than the extension impurity region is formed on the epitaxial layer and the substrate under the epitaxial layer. The density of the highly doped impurity region is increased gradually from a bottom part to a top part of the epitaxial layer.