RETICLE, SEMICONDUCTOR EXPOSURE APPARATUS, SEMICONDUCTOR EXPOSURE METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO REMARKABLY REDUCE INFLUENCE OF REFLECTION LIGHT, PREVENT DIM LIGHT FROM BEING GENERATED BY OTHER MEMBERS AND PREVENT LIGHT REFLECTED FROM PATTERN SURFACE FROM BEING REFLECTED FROM GLASS SURFACE

摘要

PURPOSE: A reticle is provided to remarkably reduce the influence of reflection light, prevent dim light from being generated by other members and prevent the light reflected from a pattern surface from being reflected from a glass surface by forming a reflection preventing layer on the back surface of a reticle. CONSTITUTION: A reticle(11) has a pattern region in which a circuit pattern(12) is formed. A mask region of a width d is formed in the outer circumference of the pattern region. A reflection preventing layer(13) is formed on the surface of the reticle far away form the pattern region. When n1 is an index of refraction of a medium at the light incidence of the reticle, n2 is an index of refraction of the reticle, t is a thickness of the reticle, and theta is an incident angle of light over the reticle, the width d of the mask layer satisfies the following relationship d=2t*tangent£sine¬-1(n1/n2*sine theta)|.