SEMICONDUCTOR DEVICE HAVING HIGH DEGREE OF INTEGRATION BY INCREASING PHOTO PROCESS MARGIN, METHOD OF FABRICATING THE SAME FOR INCREASING PRODUCTIVITY AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device, a fabricating method of the same, an SRAM device, and a method of fabricating the same are provided to secure a high degree of integration by increasing a photo process margin. CONSTITUTION: A P-type doping region and an N-type doping region are formed within a unit cell region of a semiconductor substrate. A plurality of active patterns(102) having a first pitch are arranged in the P-type doping region and the N-type doping region. A plurality of gate patterns having a second pitch are arranged vertically to the active patterns. The first and the second pitches are formed with same size. A length of a first side of the unit cell region corresponds to integer times of the first pitch.