METHOD OF FORMING BIT LINE CONTACT OF SEMICONDUCTOR DEVICE FOR PREVENTING BRIDGE PHENOMENON DUE TO INCREASE OF TOP AREA OF BIT LINE CONTACT

摘要

Purpose: a kind of method for the dotted line contact being used to form semiconductor device is arranged to prevent a bridge phenomenon, due to the increase of a top area of bit line contact, passes through a bottom section of fixed bit line contact. Construction: a first insulating layer (11) is formed in semi-conductive substrate (10). Second insulating layer (14) is formed in first insulating layer. One dotted line contacts, and for making a part exposure of landing plug (13), is formed by selectively etching the first and second insulating layers. One wet cleaning process is performed to remove remaining insulating materials from a bottom face of bit line contact.