Method for forming bit line contacts and bit lines during the formation of a semiconductor device, and devices and systems including the bit lines and bit line contacts

摘要

A method for forming a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly the spacing between the bit lines which, with conventional processes, may strain photolithographic limits. A semiconductor device formed using the method, and an electronic system comprising the semiconductor device, are also described.