METHOD FOR FORMING BIT LINE CONTACTS AND BIT LINES DURING THE FORMATION OF A FLASH MEMORY DEVICE, AND DEVICES INCLUDING THE BIT LINES AND BIT LINE CONTACTS

摘要

A method used during manufacture of a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly with regard to spacing between the bit lines which, with conventional processes, may strain photolithograpic limits. A semiconductor device formed using the method, and an electronic system comprising the semiconductor device, are also described.