METHOD FOR DRIVING NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR MEMORY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY REDUCING SIZE OF RECORD VOLTAGE

摘要

PROBLEM TO BE SOLVED: To provide an element which can decrease the absolute value of write-in voltage without complicating the structure of a nonvolatile memory element in order to realize miniaturization and a large capacity of a memory cell.;SOLUTION: A first selection transistor is formed between the memory cell and a semiconductor substrate, and has a first insulating layer and a first selector gate. A second selection transistor is formed between the memory cell and a drain diffusion layer, and has a second insulating layer and a second selector gate. A process applies a negative first voltage to the drain and the first selection gate, applies a positive second voltage to the second selection gate, and applies a zero or positive third voltage to a source. A process applies a positive fourth voltage larger than the second voltage to a control gate of a memory cell in which charge is implanted are installed. Consequently, it is characterized that charge is implanted in a charge storage layer without applying a high voltage to the control gate.;COPYRIGHT: (C)2005,JPO&NCIPI