METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE BY DUAL DAMASCENE PROCESS TO IMPROVE RELIABILITY OF METAL INTERCONNECTION

摘要

Purpose: a kind of method, the reliability that the metal interconnection for forming semiconductor device by a dual damascene process is arranged to improve a kind of metal interconnection are deteriorated by one layer insulation of prevention by oxygen plasma or by preventing metal interconnection from aoxidizing or corrode. Construction: a layer insulation (106) forms a low dielectric material in upper semi-conductive substrate (100) wherein the first diffusion barrier layer (102) by using, and an insulating layer (103) includes that lower metal is connected with each other (104) and the second diffusion barrier layer (105) is sequentially formed. By using a photoresist layer, layer insulation and the second diffusion barrier layer are patterned to form access opening. One inorganic arc (anti-reflection coating) is deposited on composite structure to fill through-hole hole. By using a photoresist layer to define, inorganic arc is etched by a predetermined depth according to photoresist layer mode one groove. By using inorganic arc as a dura mater, a predetermined depth of layer insulation is etched to form a bar ditch. The inorganic arc stayed in composite structure is eliminated. A metal layer, which is deposited to, is filled in through-hole hole and ditch, so that a upper metal interconnection (111) is formed.