STRUCTURE OF INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF TO IMPROVE ELECTRICAL CHARACTERISTIC AND EMBODY HIGH INTEGRATION

摘要

A kind of purpose: method, a structure setting of a layer insulation of semiconductor device is used to form into one electrical characteristics of raising and embodies high integration, by improving the ability of filling a vacancy between modes, by shakeouing the surface of mode and by reducing capacitor between modes due to a low dielectric material. Construction: it includes conductive pattern (12) that the first FSG (fluorinated silicate glass) oxide layers (13), which are formed in semi-conductive substrate (11),. One HSQ (hydrogen silsesquioxane) oxide layer (14) is formed in the first FSG layers. 2nd FSG oxide layers (15) are formed in HSQ oxide layers. First FSG oxide layers have 600-1500 angstroms of a thickness.