METHOD OF FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE TO IMPROVE BARRIER CHARACTERISTIC OF PSG LAYER

摘要

Purpose: a kind of method for the layer insulation being used to form semiconductor device is arranged to carry out the planarization process for layer insulation, by executing a RTP (rapid thermal treatment), for minimizing a diffusion length of dopant. Construction: a gate electrode (22) for a predetermined shape copies an insulating substrate (21). It is laminated on insulating substrate, including gate electrode for one PSG layers (24). One layer insulation is formed by a BPSG layers (26) are laminated on PSG layers. Layer insulation is planarized by a RTP. RTP includes the first thermal process, is used to shakeout layer insulation and the second thermal process, is used to make a surface of layer insulation hard.