METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY OF SEMICONDUCTOR DEVICE AND EMBODY HIGH INTEGRATION

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to improve the reliability of a semiconductor device and embody high integration by preventing a pattern profile defect caused by an insufficient thickness margin in a gate etch process. CONSTITUTION: A gate oxide layer(22) and a polysilicon layer are formed on a semiconductor substrate(21). A hard mask layer is formed on the polysilicon layer. The hard mask layer is patterned by an etch process using a photoresist pattern. The polysilicon layer is patterned by an etch process using the patterned hard mask layer as an etch mask. After a BARC(bottom anti-reflective coating) is formed on the resultant structure, the patterned hard mask layer is exposed by an etch-back process and the BARC is left in an active region. The patterned hard mask layer is removed by using the remaining BARC as an etch stop layer. The remaining BARC is eliminated.