METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE TO EMBODY STABILITY OF DEVICE

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to embody stability of a device by preventing a notching phenomenon of a PMOS(p-channel metal oxide semiconductor) gate electrode. CONSTITUTION: A gate oxide layer and an undoped polysilicon layer are formed on a semiconductor substrate(11) in which an NMOS transistor area and a PMOS transistor area are defined. The undoped polysilicon layer in the NMOS transistor area is doped to form a doped polysilicon layer. The doped polysilicon layer in the NMOS transistor area and the undoped polysilicon layer in the PMOS transistor area are patterned by a main etch process using mixture gas of HBr/He-O2. An NMOS gate electrode(140N) and a PMOS gate electrode(140P) are formed by an over-etch process using mixture gas of HBr/N2/He-O2.